December 13-14, 2023, 2023 Silicon Carbide & Gallium Nitride Industry Summit Forum and Hangjia Aurora Award Ceremony were successfully held in Shenzhen. As a leading third-generation semiconductor supplier in China, APS was invited to give a speech, and Alex Yuan, Deputy Director of Marketing, shared with the attendees the application and prospects of domestically produced silicon carbide devices in the new energy market. In addition, APS also won two major awards of the Aurora Award: "Top 10 Chinese SiC Device Design Enterprises" and "Annual Excellent Products".

Don't forget your original dream to deeply cultivate the market and accelerate the localization process of silicon carbide

At the Dec 14th " Hangjia Aurora Award Ceremony", APS won two major awards, "Top 10 Chinese SiC Device Design Enterprises" and "Annual Excellent Product", with excellent research and development innovation capabilities, which have been widely recognized by the industry.

As a leading supplier of third-generation silicon carbide power semiconductor devices in China, APS has successfully launched multiple new generation SiC MOSFET and automotive grade SiC MOSFET. This time, the automotive grade silicon carbide MOSFET won the "Annual Excellent Product " award, which is also a recognition of APS products. These products cover mainstream market specifications, such as 1200V 35/70/160mohm and 650V 30/45/60mohm, to meet the needs of different voltage applications. These products have high reliability and robustness, as well as excellent switching performance and conductivity characteristics. In addition, they also have excellent body diode reverse recovery characteristics, which can significantly reduce the system cost of in vehicle charging (OBC) and DC-DC applications. APS automotive grade silicon carbide products meet the reliability verification of automotive specification AEC-Q101 and have passed HV-H3TRB rigorous testing.

APS will continue to innovate, research, and develop. It is committed to using leading MOSFET technology and excellent quality durable packaging. Through deep collaboration with the upstream and downstream of the industry chain, APS will gradually realize the replacement of domestic silicon carbide devices in various application fields.

Application and Prospects of Domestic SiC devices in the New Energy Market

Mr. Alex Yuan first introduced the scale of silicon carbide devices in the new energy market in his speech. As an important branch of the new energy field, the photovoltaic industry in China continues to expand in scale, with core technologies becoming more mature. The huge market demand has also driven the development of silicon carbide devices. With the continuous expansion of solar energy systems, the demand for inverter power density, especially for string inverters, is increasing. Silicon carbide devices have become a good solution. Silicon carbide devices have excellent energy consumption characteristics and high-temperature stability which can work in high-temperature environments, significantly reducing energy loss, optimizing heat dissipation, and reducing costs.

To meet market demand, APS has launched silicon carbide diodes and silicon carbide MOSFET, which are applied in the photovoltaic energy storage field and have been supplied in bulk to leading enterprises in the photovoltaic industry. These products have low conduction and switching losses, which can improve energy conversion efficiency, reduce system costs, and provide assistance for the development of green energy.

Secondly, it was introduced that with the accelerated promotion of the global "dual carbon" policy, the new energy vehicle industry experienced rapid development and a rise in demand for silicon carbide in vehicle grade devices, DC charging piles, and other products. Especially with the transformation of the voltage architecture of new energy vehicles from 400V to 800V, high-power fast charging has become an industry consensus, which will further expand the application scale of silicon carbide devices in the field of new energy vehicles.

In new energy vehicles, silicon carbide devices are mainly used in main inverters, on-board chargers (OBCs), and DC/DC converters. Among them, the onboard charger (OBC) is mainly 6.6KW, and it is expected to maintain a 57.2% share by 2025. APS Silicon Carbide MOSFET has been supplied in bulk to leading companies in automotive power supply. The market share of 11KW in car chargers (OBC) is expected to increase year by year, and it is expected to reach 18% by 2025. APS 1200V silicon carbide MOSFET has also been validated on the client side.

Silicon carbide devices have better switching performance, lower losses, and allow for higher operating junction temperatures, thereby achieving higher power density, reliability, and efficiency. These advantages make SiC particularly suitable for working in high voltage, high temperature, and high frequency scenarios. SiC can also achieve stronger operational capabilities with less electricity consumption.

APS has launched a series of solutions for new energy vehicle OBC and electric drive inverters, helping new energy vehicles improve acceleration, reduce system costs, increase range, and become lightweight.