On August 28, 2024, Alpha Power Solutions Hong Kong Limited, a subsidiary of APS, received funding from the Innovation and Technology Fund of the Hong Kong Innovation and Technology Commission to develop SiC trench MOSFET transistor manufacturing technology and product research and development, aiming to build a "core" highland for the integrated circuit industry in the Guangdong-Hong Kong-Macao Greater Bay Area. The wide bandgap semiconductor technology is one of the key technological fields that Hong Kong has been focusing on in recent years.

Hong Kong Special Administrative Region government has established the Hong Kong Institute of Microelectronics, a center dedicated to semiconductor research and development. It will focus on supporting wide bandgap semiconductor materials, especially silicon carbide (SiC) and gallium nitride (GaN), and accelerate technology transfer and commercialization by building a close cooperation network between universities, research and development centers, and the industry. This will help promote Hong Kong to become a global research and development and application center for wide bandgap semiconductor technology, injecting new vitality into the technological innovation and economic development of Hong Kong and even the Greater Bay Area.

APS, as a leading enterprise in the field of SiC power semiconductor devices in China, has long been focused on the research, development, production, and sales of SiC products. It has successfully achieved wide applications in many key areas such as renew energy vehicles, ev-charging, photovoltaic and energy storage, smart homes, etc. It has provided optimized SiC product solutions for industry leaders and contributed significantly to the achievement of carbon neutrality goals.

Tony Chau, APS CEO, said: "With ITC’ support, APS has made remarkable achievements, successfully developed and mass-produced SiC diodes and MOSFET products with performance on par with international IDM suppliers, and established our leading position in the field of SiC devices. With our profound accumulation in the process of SiC devices, we bravely meet new challenges and make every effort to develop SiC TRENCH MOSFET to reduce unit costs and promote SiC MOSFET to a broader market

In response to the challenges of high cost and difficulty in miniaturization of planar SiC transistors, APS will focus on developing an innovative SiC MOSFET manufacturing technology, striving to provide world-class quality products in a cost-effective manner. Based on the successful application of planar SiC MOSFET technology, further exploration of trench SiC MOSFET technology will be conducted to optimize the JFET resistance in traditional designs, effectively reduce RSP, and lay the foundation for further miniaturization of future generations of products.

In addition, APS will also conduct in-depth research on key technologies such as SiC trench etching, gate dielectric optimization, and annealing processes to ensure the smoothness of the trench sidewalls and bottoms, thereby solving the reliability issues of SiC MOSFET devices. Based on APS's rich experience in the field of SiC MOSFETs, it will continue to explore various layouts and device structures to continuously improve device performance and meet the growing market demand.

APS will continue to be committed to providing competitive SiC MOSFET products in the market and promoting innovation and development in the entire industry. With ITC’ support, APS will help develop the wide bandgap semiconductor chip industry in the Guangdong-Hong Kong-Macao Greater Bay Area and promote the Guangdong-Hong Kong-Macao Greater Bay Area to become a leading force in the global semiconductor industry.