Recently, according to the spirit of the ""Shanghai High-tech Achievement Transformation Project Accreditation Measures " (Shanghai Science and Technology Commission Regulation No. 8, 2020), the Shanghai Science and Technology Commission has publicly announced the list of the 4th batch of Shanghai High-tech Achievement Transformation Projects in 2024, and APS's "SiC Mos Transistor (ACM Type) Project" has successfully passed the recognition, marking APS's technological strength and market competitiveness in the field of SiC power semiconductor devices have reached a new level.

APS SiC Mosfet (ACM type)" project has been recognized this time, which is an important result of its long-term commitment to the research, production management and sales of SiC power semiconductor devices. APS 's latest Gen3B SiC MOSFET series, which covers the mainstream specifications required by the market, includes 750V 11/25/40/55mΩ and 1200V 15/20/30/40/80mΩ, etc. Through technological and process innovation, it has achieved products with better consistency, lower switching loss, and superior conduction characteristics, which are more suitable for high reliability and high performance application scenarios, especially in ev-charging, photovoltaic energy storage systems, and key components of electric vehicles such as on-board chargers (OBC), DC/DC converters, air conditioning compressors, and main drive systems, providing more suitable products for end-user use to meet the increasingly fierce market demand.

APS's automotive-grade SiC MOSFET devices include 1200V 30/70/160mΩ and 750V 11/25/40/55mΩ specifications, which are packaged in TO247-4 and TO263-7 forms. The design, manufacturing, and packaging technologies are on par with international IDM, and the unit area on-resistance has been reduced through process optimization, the switching performance has been optimized, and the Kelvin Source package technology has been adopted to effectively improve the switching speed and anti-interference ability of the device. These technological breakthroughs have enabled APS's SiC MOSFET devices to maintain excellent endurance and lifespan under extreme operating conditions, providing reliable assurance for high-end applications such as renew energy vehicles.

Tony Chau, APS CEO, said, "We are deeply honored that the 'Semiconductor SiC Mos Tube (ACM Type)' project has received recognition from the Shanghai Science and Technology Commission. This recognition not only affirms our technological prowess but also rewards the efforts of our team. APS will continue to dedicate itself to technological innovation, drive the application and development of high-performance SiC devices, and offer more superior solutions to the industry."

The recognition of this project as a high-tech achievement transformation project in Shanghai not only affirms the technological innovation capabilities of APS ,but also indicates a positive outlook on its market application prospects. Through this recognition mechanism, the Shanghai Science and Technology Commission aims to encourage and support enterprises to enhance their independent innovation capabilities, promote the transformation of scientific and technological achievements, and cultivate new driving forces for innovative development. As a leader in the field of SiC power semiconductor devices, the successful recognition of APS's "Semiconductor SiC Mos Tube (ACM Type)" project undoubtedly provide a strong impetus for its future development.

APS will continue to adhere to the concept of innovation-driven development, continuously increase R&D investment, promote technological innovation and industrial upgrading. At the same time, the company will also actively cooperate with domestic and foreign downstream enterprises to jointly promote the transformation of domestic renew energy vehicles and the domestic substitution process of SiC, and contribute its own strength to the rapid development of China's semiconductor industry.