From Oct 30th to Nov 1st, the highly anticipated 2023 Electronica South China came to a successful conclusion! APS showcased its third-generation SiC MOSFET, SiC diodes, new energy vehicles, DC charging module, and photovoltaic energy storage solutions in popular fields.

At the exhibition, APS’s product range, excellent product performance, leading technology, and research and development capabilities attracted customers from all over the country. Engineers shared product application solutions and practical cases with customers from fields such as new energy vehicles, DC charging module photovoltaic energy storage, and smart furniture, and had in-depth discussions on possible cooperation opportunities.

Multiple products make significant appearances

1. The latest generation (Gen3) silicon carbide MOSFET

APS ’s third-generation silicon carbide MOSFET include various mainstream specifications in the market, such as 1200V 14/18/30/40/80mΩ and 750V 11/15mΩ. Compared with the previous generation, the third-generation silicon carbide MOSFET have undergone further technological and process improvements in product structure. The products have better parameter consistency, lower switching losses, and superior conduction characteristics to meet the application requirements of high reliability and high-performance. It is widely used in DC charging modules, photovoltaic & energy storage, OBC/DCDC/main drive and other fields.

The following data comparison is based on experimental data from APS application laboratory’s double pulse testing platform. From the graph below, it can be seen that the reverse recovery losses and total switching losses of the third-generation silicon carbide MOSFET have been greatly improved under different gate drive resistances.

APS third-generation SiC MOSFET features:

1.        Third-generation SiC MOSFET technology

2.        Advanced packaging techniques

3.        Low on-resistance

4.        Low switching losses

5.        Body diode with low reverse recovery (Qrr)

2. Automotive-grade SiC MOSFET

APS has already mass-produced automotive-grade silicon carbide MOSFET such as 1200V 35/70/160mΩ and 650V 30/45/60mΩ, which use TO247-4 and TO263-7 package forms. These products have high reliability and robustness, as well as excellent switching and conduction performance. In addition, they have outstanding body diode reverse recovery characteristics, which can significantly reduce system costs for on-board chargers (OBC) and DC-DC applications. All products have passed automotive AEC-Q101 reliability verification and vigorous 960V high-voltage H3TRB testing.

3. Industrial application solutions

APS also showcased silicon carbide MOSFET and diodes based on photovoltaic, energy storage, and DC charging module, covering mainstream specifications in the market. These products not only meet the performance standards of international leading manufacturers but also come with advanced packaging.

The silicon carbide diodes adopt ASP’s proprietary Buffer JBS structure and substrate thinning, providing powerful power operation capabilities with low losses and more reasonable and efficient parameter distribution. These products also have excellent high-temperature resistance, outstanding high-frequency performance, good power handling capabilities, and lower losses, helping customers improve energy conversion efficiency and reduce system costs. Currently, these products have started being supplied in bulk to leading customers in the photovoltaic, energy storage, and DC charging module fields.

Rich booth activities, full of popularity

At the Electronica South China, APS once again deeply felt the enthusiasm of the audience. In front of the booth, there was an endless stream of attendees, and the Lucky Turntable event carefully attracted a large number of attendees to attend.

APS has been committed to the research and development and innovation of silicon carbide devices for many years, and is dedicated to promoting the development of the domestic silicon carbide industry. We firmly believe that in the field of SiC MOSFET, domestically produced products have the potential to replace imports and make greater contributions to the progress of China’s semiconductor industry.