APS Appearance at the 2024 Solar Energy Photovoltaic Exhibition: Innovative Products and Solutions that will Lead the New Era of Smart Energy
From June 13th to 15th 2024, the world-renowned seventeenth International Solar Photovoltaic and Smart Energy (Shanghai) Conference and Exhibition successfully concluded, drawing an exciting blueprint for the future of global energy technology. At this gathering of the industry’s elite, APS, with its cutting edge technological charm, became the focus of the whole field, beautifully presenting the third-generation 1200V SiC MOSFET, 750V SIC MOS FET, 1200V high current SiC diode and other cutting-edge products, as well as innovative and applicative solutions for new energy vehicles, charging piles, photovoltaic energy storage and other popular areas, leading the industry into the new era of smart energy.
During the exhibition, APS’s display booth was a flurry of activity, attracting customers and professionals from all over China to stop and converse. The company’s engineer interacted deeply with the guests, sharing not only detailed and accurate cases of product application, but also having a heated discussion of the trends in technology in the photovoltaic energy storage field and potential cooperation opportunities, showing APS’s deep background in technological innovation and market insight.
The Shocking Release of a New Generation of Products
The Newest (Gen3) Silicon Carbonate MOSFET
APS has launched its latest generation of the Gen3B Silicon Carbonate MOSFET series, which fully covers the mainstream specifications of market demand, including 750V 11/25/40/55mΩ and 1200V 15/20/30/40mΩ. Through the dual innovation of technology and technique, products with better consistency, better switching loss, and better conduction characteristics have been achieved. These products are more suitable for high reliability and high-performance application scenarios, especially in charging piles, photovoltaic energy storage systems, and key components of electric vehicles such as on-board chargers (OBC), DC/DC converters and main drive systems, providing finished products that are more suitable for client use and can meet more intensive market demands.
The third generation of SiC MOSFET has the following distinguishing features:
l High capacity, high reliability, low turn-off loss
l Outstanding switching performance and conductivity
l Excellent body diode reverse recovery characteristics
l 750V MOSFET (100V higher than the traditional 650V voltage) is more suitable for vehicle OBC and energy storage applications.
l 1700V MOSFET & 2200V MOSFET are more suitable for 1500V photovoltaic systems and heavy truck.
Automotive Grade SiC MOSFET: Safety and Efficiency as a Driving Force
At present, APS has launched automotive grade silicon carbide MOSFET products, including 1200V 35/70/160mΩ and 650V 30/45/60mΩ specifications using TO247-4 and TO263-7 packaging. In addition, these products feature excellent body diode reverse recovery characteristics, significantly reducing the system cost for on-board charging (OBC) and DC-DC applications. All the products above have passed the automotive grade AEC-Q101 reliability verification and the rigorous 960V high-voltage H3TRB test.
Empowering Industries 4.0: Innovative Application Schemes Lead the Upgrade of Industries
In addition, APS also displayed industrial-grade application schemes for photovoltaics, energy storage, and DC charging pile markets. These schemes are equipped with internationally leading silicon carbide MOSFETs and diodes and use advanced packaging technology. They are not only on par with international manufacturers in terms of performance, but also show unique advantages in terms of energy efficiency improvement and cost control. In particular, the company's silicon carbide diodes, with their unique Buffer JBS structure and optimized substrate thinning technology, achieve high-efficiency power output with low losses. Their excellent thermal stability, high-frequency performance, and power handling capabilities are helping customers stand out in the fiercely competitive market.
Interacting Continuously: Working Together in a Great Endeavor
The APS booth activities at the exhibition were diverse and of great variety, gaining lots of popularity. Many exhibitors were attracted especially by the carefully planned lucky wheel segment and actively participated in the event, creating a cheerful and warm atmosphere.
As a firm practitioner of domestic silicon carbide device R&D and innovation, APS accelerates the path of self-reliance and self-improvement of China's semiconductor industry. We have reason to believe that in the near future, domestic SiC MOSFET will not only be able to effectively replace imported products, but will also contribute to the success and development of the semiconductor industry in China and even globally, opening up a new era of smart energy applications.