Technological progress has pushed silicon semiconductors to reach their theoretical material limit. So far, silicon-based power devices cannot meet the increasing demand of power electronics for power devices in various industrial/commercial applications. These include higher blocking voltage, switching frequency, efficiency and reliability. Silicon carbide (SiC), also known as wide band gap material, is an ideal alternative to silicon. 

Power devices made of silicon carbide (SiC) technology can benefit from its superior performance. These characteristics enable silicon carbide devices to work at a temperature higher than 200℃. Compared with silicon-based devices, silicon carbide devices have a power density of twice that of silicon devices, with a power loss of only 50% of that of the same. Electronic systems using silicon carbide devices feature smaller system sizes, lower system costs and higher reliability in high-temperature environments. 

Silicon carbide (SiC) is obviously superior to silicon and silicon arsenide in terms of the band gap, breakdown electric field and thermal conductivity.